Phosphorus Oxidation Controls Epitaxial Shell Growth in InP/ZnSe Quantum Dots
InP/ZnSe/ZnS core/shell/shell quantum dots are the most investigated quantum dot material for commercial applications involving visible light emission. The inner InP/ZnSe interface is complex since it is not charge balanced, and the InP surface is prone to oxidation. The role of oxidative defects at this interface has remained a topic of debate, with conflicting reports of both detrimental and beneficial effects on the quantum dot properties. In this study we probe the structure of the InP/ZnSe interface at the atomic level using <sup>31</sup>P, <sup>77</sup>Se and <sup>17</sup>O ssNMR and HAADF-STEM. We observe clear differences in Se NMR spectra and crystal orientation of core and shell when the InP/ZnSe is oxidized on purpose. High levels of interface oxidation result in an amorphous phosphate layer at the interface, which inhibits epitaxial growth of the ZnSe shell.
Authors
- Maarten Stam (ORCID: https://orcid.org/0000-0001-9789-8002)
- G. A. de Wijs (ORCID: https://orcid.org/0000-0002-1818-0738)
- Sara Bals (ORCID: https://orcid.org/0000-0002-4249-8017)
- M. van Leeuwen
- Arjan J. Houtepen (ORCID: https://orcid.org/0000-0001-8328-443X)
- Ernst R. H. van Eck (ORCID: https://orcid.org/0000-0002-2365-9583)
- Tom Speelman (ORCID: https://orcid.org/0000-0003-2815-5381)
- Reinout F. Ubbink (ORCID: https://orcid.org/0000-0001-7714-5097)
- Daniel Arenas Esteban (ORCID: https://orcid.org/0000-0002-5626-9848)
Institutions
- Radboud University Nijmegen (NL)
- University of Antwerp (BE)
- Delft University of Technology (NL)
Publication Details
- Journal
- ACS Nano
- Published
- 2024-12-30
- DOI
- https://doi.org/10.1021/acsnano.4c13110
- Citations
- 8
- Primary Topic
- Quantum Dots Synthesis And Properties
- Type
- article
- Field-Weighted Citation Impact
- 0.94
Funders
- Nederlandse Organisatie voor Wetenschappelijk Onderzoek