CHEMICAL SENSORS WITH MEMRISTIVE PROPERTIES: REVIEW

The article provides a brief review of literature data related to the principles of operation and parameters of currently created semiconductor heterostructures with memristive properties, in which the electrical resistance switching is caused by different physicochemical principles. The considered structures are promising from the point of view of their application in the role of discrete gas-sensitive and biosensor cells with improved operational characteristics, as well as elements of multisensory neuromorphic arrays of the “electronic nose”-like systems.