The Ptcdi-C8/P-Si Heterojunction Diode: Its Construction and Electrical Characterization

In this study, an Al/PTCDI-C8/p-Si organic-inorganic (OI) heterojunction diode (C1) was fabricated by depositing a PTCDI-C8 thin film onto p-Si using the spin coating method. Likewise, a conventional Al/p-Si metal-semiconductor (MS) diode (C0) was fabricated without the use of an interlayer. I-V and C-V measurements of the C0 and C1 diodes were taken in the dark and at room temperature. The rectifying properties of both diodes were good. From the I–V characteristics, the ideality factor, barrier height, and series resistance of the C1 diode were determined to be 2.1, 0.74 eV, and 248 kΩ, respectively. The BH value obtained for the C1 heterojunction is higher than the value obtained for the conventional C0 diode. The electrical parameters of both the C1 and C0 diodes, particularly the series resistance, were recalculated using Cheungs and Norde methods. At room temperature, the C-V measurements of the diodes were carried out at various frequencies. From the evaluation of the C-V characteristics, the diffusion potential (Vd), barrier height (Φb(C-V)), and free carrier density (NA) of both diodes were calculated. Additionally, the device's photovoltaic parameters were measured under illumination conditions. The C1 heterojunction shows a photodiode behavior with the obtained photovoltaic parameters Voc and Isc.