Interfacial diffusion enabled broadband response in photodetector based on In<sub>2</sub>Se<sub>3</sub>/GaAs heterojunction
Infrared (IR) photodetectors play a crucial role in modern technologies due to their ability to operate in various environmental conditions. This study developed high-performance In<sub>2</sub>Se<sub>3</sub>/GaAs interdiffusion heterostructure photodetectors with broadband response using liquid-phase method. It is believed that an InGaAs layer and In<sub>2</sub>Se<sub>3</sub> have been formed at the interface through the mutual diffusion of elements, resulting in a detection spectral range spanning from 0.45 to 2.7 µm. Consequently, the In<sub>2</sub>Se<sub>3</sub>/GaAs photodetector exhibits notably low noise equivalent power of 6.21 × 10<sup>-15</sup> WHz<sup>-1/2</sup> at 1000 Hz, high photoresponsivity (<i>R</i>) and detectivity (<i>D*</i>) of 16.22 mA/W and 4.01 × 10<sup>11</sup> Jones under 0 V with 630 nm wavelength, respectively. At 1550 nm, it achieves a <i>R</i> of 0.43 µAW<sup>-1</sup> and <i>D*</i>of 1.07 × 10<sup>8</sup> Jones under 0 V. This strongly suggests that the interdiffused In<sub>2</sub>Se<sub>3</sub>/GaAs heterostructure is a high performance and low-cost material for broadband responsive photodetectors.
Authors
- Yufeng Liu (ORCID: https://orcid.org/0000-0002-2733-7733)
- Jiaqi Zhu (ORCID: https://orcid.org/0000-0003-0256-6924)
- Wen Li
- Dingyue Sun
- Yufeng Shan
- Xinwu Lu
- Jing Guo
- Jichao Shi
- Yongzheng Fang
- Ning Dai
Institutions
- University of Chinese Academy of Sciences (CN)
- Shanghai Institute of Technology (CN)
Publication Details
- Journal
- Optics Express
- Published
- 2024-12-30
- DOI
- https://doi.org/10.1364/oe.543542
- Citations
- 3
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.63
Funders
- National Natural Science Foundation of China
- National Key Research and Development Program of China