Optical Properties of Spin‐Coated Solution Processed MoS<sub>2</sub>

In this study, the optical and structural properties of solution‐processed molybdenum disulfide (MoS 2 ) thin films are explored. MoS 2 is synthesized via chemical exfoliation and deposited on fused silica and silicon substrates using a spin‐coating technique. The morphology and structural properties of the films are characterized using scanning electron microscopy and atomic force microscopy. Optical properties are examined through UV–vis and Raman spectroscopy. In the results, it is shown that the MoS 2 thin films exhibit an indirect bandgap of 1.40 eV with over 60% absorption between 400 and 710 nm. Also, physics‐based optical modeling predicts a potential current generation of 25 mA cm −2 with full coverage of MoS 2 , indicating significant potential for solution‐processed MoS 2 as an absorber layer in optoelectronic applications.

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Publication Details

Journal
Advanced Energy and Sustainability Research
Published
2024-12-28
DOI
https://doi.org/10.1002/aesr.202400392
Citations
4
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.47

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article

Optical Properties of Spin‐Coated Solution Processed MoS2

Khalid A. Askar, Ammar M. Nayfeh, Ayman Rezk, Muntaser Abdelrahman Almansoori et al.
4 citations
Advanced Energy and Sustainability Research
2D Materials and Applications
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article

Optical Properties of Spin‐Coated Solution Processed MoS2

Khalid A. Askar, Ammar M. Nayfeh, Ayman Rezk, Muntaser Abdelrahman Almansoori, Sofyan Hadi
article en
4 citations

Abstract

In this study, the optical and structural properties of solution‐processed molybdenum disulfide (MoS 2 ) thin films are explored. MoS 2 is synthesized via chemical exfoliation and deposited on fused silica and silicon substrates using a spin‐coating technique. The morphology and structural properties of the films are characterized using scanning electron microscopy and atomic force microscopy. Optical properties are examined through UV–vis and Raman spectroscopy. In the results, it is shown that the MoS 2 thin films exhibit an indirect bandgap of 1.40 eV with over 60% absorption between 400 and 710 nm. Also, physics‐based optical modeling predicts a potential current generation of 25 mA cm −2 with full coverage of MoS 2 , indicating significant potential for solution‐processed MoS 2 as an absorber layer in optoelectronic applications.

Advanced Energy and Sustainability ResearchVol. 6(6)
University of Dubai (AE), Khalifa University of Science and Technology (AE)
Advanced Technology Research Council, Khalifa University of Science, Technology and Research
Openalex Percentile: Top 37%
2D Materials and Applications
0.47
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