Vertical GaN Schottky barrier diodes with micrometer pillar Schottky contacts

Abstract We present a novel design of gallium nitride (GaN) Schottky barrier diodes (SBDs) with a vertical micropillar structure. The micron-scale electrode design can effectively enhance the on-state current density and reduce the specific on-resistance ( R on,Sp ). In addition, it allows for a reduction in the turn-on voltage ( V on ) by minimizing the spacing between the electrodes. This phenomenon can be explained by the intensified electric field coupling between the electrodes, as confirmed from the technology computer aided design simulations. By controlling the distance between the micron pillars, the V on of the SBD varies from approximately 0.35 V to 0.46 V. These results showcase the potential of our SBD design with micropillar contacts in efficient high-power applications.