Capacitance of Film Structures Including Graphitic Carbon Nitride

Al/g-C 3 N 4 /Si/Al, Al/g-C 3 N 4 /SiO 2 /Si/Al, Al/g-C 3 N 4 /Al and Al/g-C 3 N 4 /Al 2 O 3 /Al structures were fabricated by rapid chemical vapor deposition of graphitic carbon nitride (g-C 3 N 4 ) from melamine onto silicon (Si) and aluminum (Al) substrates partially coated with appropriate oxide – SiO 2 or Al 2 O 3 – and Al contacts deposited on the surface. Their capacitance-voltage characteristics and frequency dependence of the capacitance were measured at room temperature. It was found that the permittivity of g-C 3 N 4 is 14 in structures on silicon and 9–10 in structures on aluminum. The decrease in permittivity is explained by the formation of Al 2 O 3 at the g-C 3 N 4 /Al boundary during the deposition of g-C 3 N 4 , as indicated by the results of the X-ray diffraction analysis of the formed samples.