Design Solutions for Device Structures of Bipolar Transistors with an Insulated Gate and a Vertical Channel Arrangement

This work presents the results of computer simulations of the operational characteristics of vertical channel Insulated Gate Bipolar Transistor (IGBT) device structures designed according to the following technologies: Trench-IGBT, Superjunction Trench-IGBT (SJ-IGBT), Deep Trench SJ-IGBT (DT-SJ-IGBT), Floating p- region SJ-IGBT (FP-SJ-IGBT), and Step-Doped Collector Trench-IGBT. The operating principles of these insulated gate bipolar transistor design solutions are discussed. A particular focus is placed on the Step-Doped Collector Trench-IGBT structure, which demonstrates reduced switching losses.