Impact of ion implantation on the performance of AlGaInP Micro-LEDs

This study makes significant contributions to the field by comprehensively examining the impact of various ion implantation techniques on the performance of aluminum gallium indium phosphide red micro-light-emitting diodes (micro-LEDs), with a particular focus on enhancing material insulation and optoelectronic properties. By utilizing stopping and range of ions in matter (SRIM) simulation, this research introduces a gradual energy implantation scheme to optimize ion distribution. This novel approach is demonstrated to markedly improve device performance, outperforming conventional single energy implantation methods. Additionally, this study investigates the effects of ion implantation using three elements of varying atomic masses: argon (Ar), fluorine (F) and arsenic (As), combining SRIM simulations with empirical validation. The results reveal that, at equivalent dosages, As ions generate a greater number of vacancies, significantly enhancing the insulation characteristics of the semiconductor material. Notably, As ion implantation demonstrated superior performance in reducing leakage current and improving external quantum efficiency. These findings offer new perspectives on the design of insulation layers for future micro-LED technologies. Moreover, the research provides a detailed comparative analysis of the light output power and wavelength shift in micro-LEDs of varying pixel sizes. It elucidates how current crowding and thermal effects influence the optoelectronic performance, thereby underscoring the pivotal role of pixel size in determining device efficiency. The insights gained from this analysis present valuable scientific and technical guidance for the design of future micro-LED systems, particularly in the context of miniaturization and performance optimization. In sum, this study not only advances the optimization of ion implantation techniques but also presents practical and viable strategies for improving the insulation and overall performance of micro-LEDs.

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Publication Details

Journal
Materials Today Advances
Published
2024-12-28
DOI
https://doi.org/10.1016/j.mtadv.2024.100552
Citations
2
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.62
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article

Impact of ion implantation on the performance of AlGaInP Micro-LEDs

Yen‐Ru Chen, Hsin-Yu Chou, Anoop Kumar Singh, Dong‐Sing Wuu et al.
2 citations
Materials Today Advances
GaN-based semiconductor devices and materials
0.62
article

Impact of ion implantation on the performance of AlGaInP Micro-LEDs

Yen‐Ru Chen, Hsin-Yu Chou, Anoop Kumar Singh, Dong‐Sing Wuu, Po−Liang Liu, Wen‐Jen Chiang, Yu-Chih Hsu, S.-H. Lo
article en
2 citations

Abstract

This study makes significant contributions to the field by comprehensively examining the impact of various ion implantation techniques on the performance of aluminum gallium indium phosphide red micro-light-emitting diodes (micro-LEDs), with a particular focus on enhancing material insulation and optoelectronic properties. By utilizing stopping and range of ions in matter (SRIM) simulation, this research introduces a gradual energy implantation scheme to optimize ion distribution. This novel approach is demonstrated to markedly improve device performance, outperforming conventional single energy implantation methods. Additionally, this study investigates the effects of ion implantation using three elements of varying atomic masses: argon (Ar), fluorine (F) and arsenic (As), combining SRIM simulations with empirical validation. The results reveal that, at equivalent dosages, As ions generate a greater number of vacancies, significantly enhancing the insulation characteristics of the semiconductor material. Notably, As ion implantation demonstrated superior performance in reducing leakage current and improving external quantum efficiency. These findings offer new perspectives on the design of insulation layers for future micro-LED technologies. Moreover, the research provides a detailed comparative analysis of the light output power and wavelength shift in micro-LEDs of varying pixel sizes. It elucidates how current crowding and thermal effects influence the optoelectronic performance, thereby underscoring the pivotal role of pixel size in determining device efficiency. The insights gained from this analysis present valuable scientific and technical guidance for the design of future micro-LED systems, particularly in the context of miniaturization and performance optimization. In sum, this study not only advances the optimization of ion implantation techniques but also presents practical and viable strategies for improving the insulation and overall performance of micro-LEDs.

Materials Today AdvancesVol. 25
National Chung Hsing University (TW), National Chi Nan University (TW)
Openalex Percentile: Top 31%
GaN-based semiconductor devices and materials
0.62
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