High-temperature atomic layer deposition of HfO<sub>2</sub> film with low impurity using a novel Hf precursor
HfO 2 film was grown using a novel Hf precursor, FuHf(NMe 2 ) 3 . Physicochemical and electrical properties were improved at high temperature compared to film grown using the CpHf(NMe 2 ) 3 precursor, and it was verified by theoretical calculations.
Authors
- Jae Chan Park (ORCID: https://orcid.org/0000-0002-7040-2019)
- Ji‐Hoon Ahn (ORCID: https://orcid.org/0000-0001-6928-4038)
- Woo‐Hee Kim (ORCID: https://orcid.org/0000-0003-0868-7479)
- Bonggeun Shong (ORCID: https://orcid.org/0000-0002-5782-6300)
- Tran Thi Ngoc Van (ORCID: https://orcid.org/0000-0003-4214-1103)
- Chang Ik Choi
- Tae Joo Park (ORCID: https://orcid.org/0000-0003-4641-2425)
- Woong Pyo Jeon
Institutions
- Shin Ansan University (KR)
- Ansan University (KR)
- Hanyang University (KR)
- Hongik University (KR)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2024-12-28
- DOI
- https://doi.org/10.1039/d4tc01256a
- Citations
- 4
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.83