DEMONSTRATION OF PASSIVE, NONLINEAR AND ACTIVE DEVICES ON A HYBRID PHOTONIC PLATFORM

The monolithic fabrication of passive, nonlinear, and active functionalities on a single chip is highly desired in the wake of the development and commercialization of integrated photonic platforms. However, the co-integration of diverse functionalities has been challenging as each platform is optimized for specific applications, typically requiring different structures and fabrication flows. In this article, we report on a monolithic and complementary metal-oxide-semiconductor CMOS-compatible hybrid wafer-scale photonics platform that is suitable for linear, nonlinear, and active photonics based on moderate confinement 0.4-µm-thick Si<sub>3</sub>N<sub>4</sub> waveguiding layer coated with a ∼0.4-µm thick TeO<sub>2</sub> film. This platform offers four main advantages, which are (1) ensuring reduced stress and film cracking for scalable fabrication by using thin Si<sub>3</sub>N<sub>4</sub>, (2) allowing polarization-insensitive single-mode operation at telecom wavelengths, (3) enhancing waveguide nonlinearity and allowing dispersion engineering by adding the TeO<sub>2</sub> film coating, and (4) achieving amplification and lasing through incorporation of rare-earth dopants during the TeO<sub>2</sub> film deposition step. We present the design and experimental measurement of TeO<sub>2</sub>-coated ∼0.4-µm-thick Si<sub>3</sub>N<sub>4</sub> microring resonators with internal Q factors of 7.5 × 10<sup>5</sup> and 5.2 × 10<sup>5</sup> for TE and TM polarizations, respectively. The experimental results show that the dispersion of TeO<sub>2</sub>-coated ∼0.4-µm-thick Si<sub>3</sub>N<sub>4</sub> waveguides can be engineered between normal and anomalous by adjusting the thickness of the TeO<sub>2</sub> layer. For a 1.6-µm wide, 500 µm bend radius ring resonator with a ∼0.4-µm-thick TeO<sub>2</sub> coating, anomalous dispersion values of 25 and 78 ps/nm·km were measured at 1552 nm wavelength for the TE and TM-modes, respectively, and the onset of Kerr comb generation was observed. Also, by applying an Er-doped TeO<sub>2</sub> coating, an optical amplifier with TE and TM net gain and 5.5 dB net internal gain at 1533 nm in a 6.7-cm-long waveguide and a microdisk laser were demonstrated. These results show a promising route to monolithic integration of passive, nonlinear, and active functionalities via hybrid waveguides on standard silicon photonic platforms.

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Publication Details

Journal
Optics Express
Published
2024-12-26
DOI
https://doi.org/10.1364/oe.546052
Citations
4
Primary Topic
Photonic and Optical Devices
Type
article
Field-Weighted Citation Impact
0.83
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article

DEMONSTRATION OF PASSIVE, NONLINEAR AND ACTIVE DEVICES ON A HYBRID PHOTONIC PLATFORM

Jonathan D. B. Bradley, Thibault Wildi, Dawson B. Bonneville, Neetesh Singh et al.
4 citations
Optics Express
Photonic and Optical Devices
0.83
article

DEMONSTRATION OF PASSIVE, NONLINEAR AND ACTIVE DEVICES ON A HYBRID PHOTONIC PLATFORM

Jonathan D. B. Bradley, Thibault Wildi, Dawson B. Bonneville, Neetesh Singh, Pooya Torab Ahmadi, Hamidu M. Mbonde, Bruno Segat Frare, Batoul Hashemi, Tobias Herr, Franz X. Käertner, Peter Mascher
article en
4 citations

Abstract

The monolithic fabrication of passive, nonlinear, and active functionalities on a single chip is highly desired in the wake of the development and commercialization of integrated photonic platforms. However, the co-integration of diverse functionalities has been challenging as each platform is optimized for specific applications, typically requiring different structures and fabrication flows. In this article, we report on a monolithic and complementary metal-oxide-semiconductor CMOS-compatible hybrid wafer-scale photonics platform that is suitable for linear, nonlinear, and active photonics based on moderate confinement 0.4-µm-thick Si<sub>3</sub>N<sub>4</sub> waveguiding layer coated with a ∼0.4-µm thick TeO<sub>2</sub> film. This platform offers four main advantages, which are (1) ensuring reduced stress and film cracking for scalable fabrication by using thin Si<sub>3</sub>N<sub>4</sub>, (2) allowing polarization-insensitive single-mode operation at telecom wavelengths, (3) enhancing waveguide nonlinearity and allowing dispersion engineering by adding the TeO<sub>2</sub> film coating, and (4) achieving amplification and lasing through incorporation of rare-earth dopants during the TeO<sub>2</sub> film deposition step. We present the design and experimental measurement of TeO<sub>2</sub>-coated ∼0.4-µm-thick Si<sub>3</sub>N<sub>4</sub> microring resonators with internal Q factors of 7.5 × 10<sup>5</sup> and 5.2 × 10<sup>5</sup> for TE and TM polarizations, respectively. The experimental results show that the dispersion of TeO<sub>2</sub>-coated ∼0.4-µm-thick Si<sub>3</sub>N<sub>4</sub> waveguides can be engineered between normal and anomalous by adjusting the thickness of the TeO<sub>2</sub> layer. For a 1.6-µm wide, 500 µm bend radius ring resonator with a ∼0.4-µm-thick TeO<sub>2</sub> coating, anomalous dispersion values of 25 and 78 ps/nm·km were measured at 1552 nm wavelength for the TE and TM-modes, respectively, and the onset of Kerr comb generation was observed. Also, by applying an Er-doped TeO<sub>2</sub> coating, an optical amplifier with TE and TM net gain and 5.5 dB net internal gain at 1533 nm in a 6.7-cm-long waveguide and a microdisk laser were demonstrated. These results show a promising route to monolithic integration of passive, nonlinear, and active functionalities via hybrid waveguides on standard silicon photonic platforms.

Optics ExpressVol. 33(2)
Openalex Percentile: Top 26%
Photonic and Optical Devices
0.83
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