Raman scattering from silicon resonant Mie-voids

The influence of Mie resonances on optical scattering processes is one of the key aspects in nanophotonics. This work is devoted to the study of Raman scattering from silicon resonant Mievoids. The enhancement of the Raman scattering signal associated with the presence of multipole resonances in these structures is experimentally shown. The results demonstrate the dependence of the optical characteristics on the geometry of the samples and confirm the potential of using Mievoids in modern nanophotonic devices. The results of numerical simulation performed by the finite element method are in good agreement with the experimental reflectance spectra and help to understand the distribution of electromagnetic fields inside the nanocavities. This study opens up new possibilities for the practical use of these nanostructures in Raman spectroscopy and the development of high-precision optical devices.