A High-Power Single-Pole-Double-Throw Switch with High Isolation for Millimeter-wave Satellite Applications

This paper presents the design of a high-power single-pole-double-throw (SPDT) switch for K-band satellite applications. By adopting a design technique that cancels out the effect of drain-to-source capacitance ($\mathrm{C}_{\mathrm{ds}}$), an improvement in the isolation was achieved by increasing the on-and off-state impedance ratio. A double-shunt configuration was utilized for enhancement of the power handling capability. Implemented in $0.25-\mu \mathrm{m}$ GaN/SiC high electron mobility transistor (HEMT) technology, the proposed SPDT switch achieved an insertion loss less of than 2.1 dB, an isolation greater than 30 dB, and a power handling capability exceeding 40 dBm within the operating frequencies of interest. The experimental results demonstrate a great potential for integration into high-power transceivers aiming for low-earth-orbit satellite communication systems.