A 23.9 ppm/°C Bandgap Reference Circuit with Wide Temperature Range Using Subthreshold PVT Detector

This paper proposes an integrated calibration method to improve the TC (Temperature Coefficient) performance of the bandgap reference circuit. By using the proposed subthreshold PVT Detector, the 13 digital control signals are generated to calibrate the resistance of the bandgap reference circuit, achieving the low TC performance at all PVT corners. Besides, the stacked transistors operated in subthreshold region are employed in the proposed PVT Detector, such that the power consumption is reduced. The proposed design is implemented with TSMC $0.18 \mu \mathrm{~m}$ BCD process. The core area is $238.81 \times$ $231.8 \mu \mathrm{~m}^{2}$. The simulated output reference voltage is 800 mV with TC of $23.9 \mathrm{ppm} /{ }^{\circ} \mathrm{C}$ from $-40^{\circ} \mathrm{C}$ to $125^{\circ} \mathrm{C}$. The improvement of TC is 115.1% after the PVT compensation.

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Publication Details

Published
2024-11-07
DOI
https://doi.org/10.1109/apccas62602.2024.10808664
Citations
2
Primary Topic
Analog and Mixed-Signal Circuit Design
Type
article
Field-Weighted Citation Impact
0.37

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article

A 23.9 ppm/°C Bandgap Reference Circuit with Wide Temperature Range Using Subthreshold PVT Detector

Aleksandr Vasjanov, Vaidotas Barzdėnas, Tzung-Je Lee, R. Lai
2 citations
Analog and Mixed-Signal Circuit Design
0.37
article

A 23.9 ppm/°C Bandgap Reference Circuit with Wide Temperature Range Using Subthreshold PVT Detector

Aleksandr Vasjanov, Vaidotas Barzdėnas, Tzung-Je Lee, R. Lai
article en
2 citations

Abstract

This paper proposes an integrated calibration method to improve the TC (Temperature Coefficient) performance of the bandgap reference circuit. By using the proposed subthreshold PVT Detector, the 13 digital control signals are generated to calibrate the resistance of the bandgap reference circuit, achieving the low TC performance at all PVT corners. Besides, the stacked transistors operated in subthreshold region are employed in the proposed PVT Detector, such that the power consumption is reduced. The proposed design is implemented with TSMC $0.18 \mu \mathrm{~m}$ BCD process. The core area is $238.81 \times$ $231.8 \mu \mathrm{~m}^{2}$. The simulated output reference voltage is 800 mV with TC of $23.9 \mathrm{ppm} /{ }^{\circ} \mathrm{C}$ from $-40^{\circ} \mathrm{C}$ to $125^{\circ} \mathrm{C}$. The improvement of TC is 115.1% after the PVT compensation.

National Sun Yat-sen University (TW), Vilnius Gediminas Technical University (LT)
National Science and Technology Council
Affordable and clean energy
Openalex Percentile: Top 41%
Analog and Mixed-Signal Circuit Design
0.37
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