Tunable Ferroelectric Properties of HfO₂-Based Oxides: Role of Aluminum Doping and Bottom Electrodes
We investigate the impact of Al concentrations and different bottom electrodes on the crystallinity, ferroelectricity, energy storage density (ESD), and oxygen defects in HfxZr<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{{1}-{x}}$ </tex-math></inline-formula>O2 (HZO) materials. Our results reveal that these variations are strongly linked to oxygen vacancy (VO) formation and the stabilization of the tetragonal (t) phase. Higher Al concentrations enhance t-phase stability, suppressing the transition to the orthorhombic (o) phase. This effect, coupled with the bottom electrode configuration, plays a critical role in shaping the properties of HZO. These findings provide valuable guidelines for optimizing ferroelectric (FE) devices through precise control of doping levels and electrode materials.
Authors
- Rino Choi (ORCID: https://orcid.org/0000-0003-0604-7849)
- Soi Jeong (ORCID: https://orcid.org/0009-0001-4881-1166)
- Ji Won You
- Been Kwak (ORCID: https://orcid.org/0000-0002-0792-5095)
- Changhyeon Han (ORCID: https://orcid.org/0000-0001-9441-421X)
- Eun Chan Park
- Ki Ryun Kwon
- Jiyong Yim (ORCID: https://orcid.org/0000-0002-1657-3837)
- Daewoong Kwon (ORCID: https://orcid.org/0000-0001-8261-4337)
Institutions
- Inha University (KR)
- Hanyang University (KR)
Publication Details
- Journal
- IEEE Transactions on Electron Devices
- Published
- 2024-12-27
- DOI
- https://doi.org/10.1109/ted.2024.3517593
- Citations
- 5
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 1.04