Process and Design Considerations for Spin Orbit Torque MRAM

Spin-orbit torque magnetic random access memory (SOT-MRAM) is widely recognized as a promising candidate for the next generation of high-performance nonvolatile memory solutions. Although characterized by its ultrafast operation speed and exceptional reliability, SOTMRAM presents significant challenges in fabrication process and circuit design due to its three-terminal topology and toppinned nano-pillar stack structure. In this invited paper, we provide a review of our recent advancements in the development of SOT-MRAM. Key issues concerning the process and design of SOT-MRAM are thoroughly discussed, meanwhile detailed optimization strategies and improvements are presented.