A Comparative Analysis of SiC MOSFET Performance in a Traction Inverter

This study rigorously tests and verifies silicon carbide (SiC) power modules within a developed 800 V electric vehicle traction inverter. SiC traction inverters offer high efficiency, power density, and compact size. The developed SiCbased traction inverter is thoroughly evaluated on the established platform with various switching frequency, achieving a peak drive efficiency exceeding 98% at 6 kHz and a power density of $50 \mathrm{~kW} / \mathrm{L}$.

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Publication Details

Published
2024-11-07
DOI
https://doi.org/10.1109/apccas62602.2024.10808742
Citations
1
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
Field-Weighted Citation Impact
0.21

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article

A Comparative Analysis of SiC MOSFET Performance in a Traction Inverter

Yiling Lin, Uma Sankar Rout, Yulong Wang, Chih-Chiang Wu et al.
1 citations
Silicon Carbide Semiconductor Technologies
0.21
article

A Comparative Analysis of SiC MOSFET Performance in a Traction Inverter

Yiling Lin, Uma Sankar Rout, Yulong Wang, Chih-Chiang Wu, Jwu-Sheng Hu
article en
1 citations

Abstract

This study rigorously tests and verifies silicon carbide (SiC) power modules within a developed 800 V electric vehicle traction inverter. SiC traction inverters offer high efficiency, power density, and compact size. The developed SiCbased traction inverter is thoroughly evaluated on the established platform with various switching frequency, achieving a peak drive efficiency exceeding 98% at 6 kHz and a power density of $50 \mathrm{~kW} / \mathrm{L}$.

National Yang Ming Chiao Tung University (TW)
Ministry of Science and Technology
Affordable and clean energy
Openalex Percentile: Top 44%
Silicon Carbide Semiconductor Technologies
0.21
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