Monolithically Integrated GaN Comparator Based on Complementary Logic

A gallium nitride (GaN) two-stage comparator based on complementary logic (CL) architecture is demonstrated and systematically investigated. The comparator features monolithically integrated enhancement-mode n-channel and p-channel GaN field-effect transistors on a commercial p-GaN gate high-electron-mobility transistor (HEMT) platform. Benefiting from energy-efficient CL configuration, the two-stage comparator exhibits rail-to-rail operation from 25 °C to 200 °C with reduced power consumption. The temperature-dependent voltage transfer characteristics, output waveforms, and frequency responses of the fabricated two-stage comparator are studied in detail to reveal limiting factors and corresponding mechanisms of n-/p-FETs on circuit performance. These results can provide valuable insights for the further development of GaN CL integrated circuits (ICs) for next-generation power conversion systems.

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Publication Details

Journal
IEEE Transactions on Electron Devices
Published
2024-12-27
DOI
https://doi.org/10.1109/ted.2024.3517603
Citations
10
Primary Topic
Photonic and Optical Devices
Type
article
Field-Weighted Citation Impact
2.09

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article

Monolithically Integrated GaN Comparator Based on Complementary Logic

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10 citations
IEEE Transactions on Electron Devices
Photonic and Optical Devices
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article

Monolithically Integrated GaN Comparator Based on Complementary Logic

Zheyang Zheng, Yat Hon Ng, Hang Liao, Ji Shu, Yutao Geng, Yan Cheng, Jiahui Sun, Kevin J. Chen, Sirui Feng, Tao Chen, Li Zhang, Haochen Zhang, Xu Han
article en
10 citations

Abstract

A gallium nitride (GaN) two-stage comparator based on complementary logic (CL) architecture is demonstrated and systematically investigated. The comparator features monolithically integrated enhancement-mode n-channel and p-channel GaN field-effect transistors on a commercial p-GaN gate high-electron-mobility transistor (HEMT) platform. Benefiting from energy-efficient CL configuration, the two-stage comparator exhibits rail-to-rail operation from 25 °C to 200 °C with reduced power consumption. The temperature-dependent voltage transfer characteristics, output waveforms, and frequency responses of the fabricated two-stage comparator are studied in detail to reveal limiting factors and corresponding mechanisms of n-/p-FETs on circuit performance. These results can provide valuable insights for the further development of GaN CL integrated circuits (ICs) for next-generation power conversion systems.

IEEE Transactions on Electron DevicesVol. 72(2)
Hong Kong University of Science and Technology (HK)
Croucher Foundation, National Key Research and Development Program of China
Openalex Percentile: Top 12%
Photonic and Optical Devices
2.09
DOISourceOpenAlex
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