Numerical proceeding to calculate impurity states in 2D semiconductor heterostructures
The article provides and discusses details of numerical proceeding for the expansion method to calculate energy positions and wave functions of the localized and resonant electronic states emerging in quantum well-type semiconductor nanostructures because of perturbation of confined states by the Coulomb potential of the hydrogenic impurity center. Effective mass approximation is used. Several excited both resonant and non-resonant states are calculated and classified for the case of a simple rectangular GaAs/AlGaAs quantum well. Results are compared to the ones in literature.
Authors
- C.A. Duque (ORCID: https://orcid.org/0000-0003-3382-2783)
- R. Demediuk
- Anton Tiutiunnyk (ORCID: https://orcid.org/0000-0003-1692-5561)
- Alvaro Luis Morales (ORCID: https://orcid.org/0000-0002-4004-1726)
- M.E. Mora‐Ramos (ORCID: https://orcid.org/0000-0002-6232-9958)
- V. Akimov (ORCID: https://orcid.org/0000-0001-9014-3539)
- V. Tulupenko (ORCID: https://orcid.org/0000-0002-1195-7567)
- D. Laroze (ORCID: https://orcid.org/0000-0002-6487-8096)
Institutions
- University of Tarapacá (CL)
- Donbas State Pedagogical University (UA)
- Universidad de Antioquia (CO)
- Donbass State Engineering Academy (UA)
- Universidad de Medellín (CO)
- Universidad Autónoma del Estado de Morelos (MX)
Publication Details
- Journal
- Scientific Reports
- Published
- 2024-12-27
- DOI
- https://doi.org/10.1038/s41598-024-81346-6
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Universidad de Antioquia
- Universidad de Medellín