Current blocking layer enables enhanced NiO/β-Ga₂O₃ heterojunction vertical MOSFET with a higher power figure of merit

Abstract To address the challenges of P-type doping in β -Ga 2 O 3 material and the low breakdown voltage of junctionless MOSFETs, this study introduces the first investigation of a vertical enhanced heterojunction β -Ga 2 O 3 metal-oxide-semiconductor field-effect transistor (MOSFET) with a NiO current blocking layer (CBL), employing the Sentaurus TCAD software. The results demonstrate that by adjusting the thickness and concentration of the CBL and epitaxial layers, the threshold voltage of the device oscillates between 2.8 V and 5.1 V, and the enhancement structure is successfully realized. The optimised device exhibits a current switching ratio exceeding 10 9 , a specific on-resistance (R on,sp ) of 9.01 mΩ·cm 2 , a breakdown voltage of 6061.6 V, and a power figure of merit as high as 4.08 GW cm −2 . This work is instructive for the design of NiO/ β -Ga 2 O 3 heterojunction enhanced vertical MOSFET power devices and for the future development of β -Ga 2 O 3 heterojunction power devices.