Finding Singular Points of the Concentration Curve of Doped Semiconductors

The paper continues to consider the state of a system consisting of a crystalline semiconductor doped with donor and acceptor impurities. Based on the general equation of state of the system that we derived earlier and its solution, a method for calculating the singular points of the system's state is proposed. These singular points include equivalence points and points of maximum buffer capacity. This development can find practical application in the design of semiconductor devices and equipment, as well as for assessing changes occurring in semiconductor crystals due to diffusion and electro-diffusion of impurities.