Bipolar Modulation in a Self‐Powered Ultra‐Wide Photodetector Based on Bi<sub>2</sub>Se<sub>3</sub>/AlInAsSb Heterojunction for Wavelength‐Sensitive Imaging and Encrypted Optical Communication

Broadband photodetectors (PDs) have garnered significant attention due to their ability to detect optical signals across a wide wavelength range, with applications spanning military reconnaissance, environmental monitoring, and medical imaging. However, existing broadband detectors face several practical challenges, including limited detection range, uneven photoresponse, and difficult to distinguish multispectral signals. To address these limitations, this study presents a self-powered ultra-wide PD based on the Bi<sub>2</sub>Se<sub>3</sub>/AlInAsSb heterojunction. The device can detect signals across a wide wavelength range from 250 nm to 1900 nm, exhibiting outstanding optoelectronic performance with a maximum responsivity of 0.5 A W<sup>-1</sup>, a detectivity of 4.2 × 10<sup>12</sup> Jones, a switching ratio of 1.1 × 10<sup>4</sup>, and an external quantum efficiency of 71.4%. Furthermore, the detector achieves a detectivity greater than 10<sup>10</sup> Jones across the entire broadband range, significantly improving photoresponse uniformity. Notably, due to the differential band alignment of the two materials across spectral ranges, this detector exhibits a photocurrent polarity reversal in the 650-680 nm range. Leveraging its broadband and bipolar characteristics, this PD successfully enables secure information encryption in communication systems. This study significantly advances broadband PD technology, enhancing its practical uses and introducing innovative solutions for secure communications, thus strengthening communication security and confidentiality.

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Publication Details

Journal
Advanced Materials
Published
2024-12-25
DOI
https://doi.org/10.1002/adma.202416935
Citations
35
Primary Topic
Advanced Semiconductor Detectors and Materials
Type
article
Field-Weighted Citation Impact
7.30

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Bipolar Modulation in a Self‐Powered Ultra‐Wide Photodetector Based on Bi2Se3/AlInAsSb Heterojunction for Wavelength‐Sensitive Imaging and Encrypted Optical Communication

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article

Bipolar Modulation in a Self‐Powered Ultra‐Wide Photodetector Based on Bi2Se3/AlInAsSb Heterojunction for Wavelength‐Sensitive Imaging and Encrypted Optical Communication

Ping Rong, Yüe Zhao, Dongbo Wang, Shiyong Gao, Shujie Jiao, Yajie Han, He Wen, Dongwei Jiang, Jinzhong Wang, Xiangyu Zhang
article en
35 citations

Abstract

Broadband photodetectors (PDs) have garnered significant attention due to their ability to detect optical signals across a wide wavelength range, with applications spanning military reconnaissance, environmental monitoring, and medical imaging. However, existing broadband detectors face several practical challenges, including limited detection range, uneven photoresponse, and difficult to distinguish multispectral signals. To address these limitations, this study presents a self-powered ultra-wide PD based on the Bi<sub>2</sub>Se<sub>3</sub>/AlInAsSb heterojunction. The device can detect signals across a wide wavelength range from 250 nm to 1900 nm, exhibiting outstanding optoelectronic performance with a maximum responsivity of 0.5 A W<sup>-1</sup>, a detectivity of 4.2 × 10<sup>12</sup> Jones, a switching ratio of 1.1 × 10<sup>4</sup>, and an external quantum efficiency of 71.4%. Furthermore, the detector achieves a detectivity greater than 10<sup>10</sup> Jones across the entire broadband range, significantly improving photoresponse uniformity. Notably, due to the differential band alignment of the two materials across spectral ranges, this detector exhibits a photocurrent polarity reversal in the 650-680 nm range. Leveraging its broadband and bipolar characteristics, this PD successfully enables secure information encryption in communication systems. This study significantly advances broadband PD technology, enhancing its practical uses and introducing innovative solutions for secure communications, thus strengthening communication security and confidentiality.

Advanced MaterialsVol. 37(7)
Chinese Academy of Sciences (CN), Harbin Institute of Technology (CN), Institute of Semiconductors (CN)
National Natural Science Foundation of China, National Key Research and Development Program of China
Openalex Percentile: Top 2%
Advanced Semiconductor Detectors and Materials
7.30
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