Bayberry Tannin-modified SiO2 used for 68Ge/68Ga Generator

A synthetic method of modified SiO₂ grafted with bayberry tannin (SiO₂-BT) was reported. When the prepared SiO₂-BT was used for the treatment of the mixed solution of Ge and Ga, it could achieve a 99.99% Ge adsorption performance with hardly Ga adsorb. In addition, this SiO₂-BT also exhibited excellent acid resistance, in 0.1-0.5 M HCl solutions, it maintaining over 99.8% Ge adsorption efficiency. The results of radioactive experiments showed that with 10 μCi ⁶⁸Ge loaded, this SiO₂-BT could achieve an elution efficiency of ⁶⁸Ga of 75% while the breakthrough of ⁶⁸Ge maintained below 5×10-6. Overall, this SiO₂-BT has excellent acid resistance, highly efficient ⁶⁸Ga elution, and the characteristic of long-term low ⁶⁸Ge breakthrough, making it a potential adsorbent for ⁶⁸Ge/⁶⁸Ga generators.