Ligand Engineering Enables Bifacial PbS All‐QD Homojunction Photodiodes

Abstract Infrared PbS quantum dot (QD) photodiodes play a vital role in various applications, including photovoltaics, light‐emitting diodes, lasers, and photodetectors. Despite their superior potential, high‐performance all‐QD homojunction photodiodes with bifacial structures have yet to be reported. Here, post‐treatment ligand engineering is successfully employed to precisely tune the doping dipoles of PbS QDs, transitioning them from n‐type, through intrinsic, to p‐type. All‐QD homojunction photodiodes solar cells with a n‐i‐p architecture are constructed by integrating three types of PbS QD layers of 1.37 eV bandgaps with controllable doping dipoles, which delivers a power conversion efficiency of 10.0%, among the highest values reported in PbS all‐QD homojunction solar cells so far. Owing to symmetry all‐QD architecture, bifacial PbS all‐QDs photodiodes, using 1.37 eV bandgap PbS QDs as both n‐type and p‐type charge transport layers and 0.90 eV bandgap PbS QDs as intrinsic light absorber layers, achieved an almost ideal bifactor approaching 93% and decent detectivities of 1.63 × 10 11 Jones from ITO illumination and 1.86 × 10 11 Jones from silver nanowire (Ag NW) illumination at 1370 nm. Therefore, this work provides a facile approach for the design of bifacial all‐QD homojunction photodiodes, broadening their potential applications in advanced QD optoelectronic systems.

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Publication Details

Journal
Advanced Functional Materials
Published
2024-12-26
DOI
https://doi.org/10.1002/adfm.202419316
Citations
7
Primary Topic
Quantum Dots Synthesis And Properties
Type
article
Field-Weighted Citation Impact
0.82
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article

Ligand Engineering Enables Bifacial PbS All‐QD Homojunction Photodiodes

Dawei Su, Liang Gao, Long Hu, Fandi Chen et al.
7 citations
Advanced Functional Materials
Quantum Dots Synthesis And Properties
0.82
article

Ligand Engineering Enables Bifacial PbS All‐QD Homojunction Photodiodes

Dawei Su, Liang Gao, Long Hu, Fandi Chen, Shujuan Huang, Chao Chen, Chun‐Ho Lin, Shuhua Peng, Tom Wu, Xinwei Guan, Tao Wan, Haolan Xu, Zhaojun Han, Tingting Mei, Dewei Chu, Mengyao Li, Xiaoning Li, Zhi Li, Beining Dong
article en
7 citations

Abstract

Abstract Infrared PbS quantum dot (QD) photodiodes play a vital role in various applications, including photovoltaics, light‐emitting diodes, lasers, and photodetectors. Despite their superior potential, high‐performance all‐QD homojunction photodiodes with bifacial structures have yet to be reported. Here, post‐treatment ligand engineering is successfully employed to precisely tune the doping dipoles of PbS QDs, transitioning them from n‐type, through intrinsic, to p‐type. All‐QD homojunction photodiodes solar cells with a n‐i‐p architecture are constructed by integrating three types of PbS QD layers of 1.37 eV bandgaps with controllable doping dipoles, which delivers a power conversion efficiency of 10.0%, among the highest values reported in PbS all‐QD homojunction solar cells so far. Owing to symmetry all‐QD architecture, bifacial PbS all‐QDs photodiodes, using 1.37 eV bandgap PbS QDs as both n‐type and p‐type charge transport layers and 0.90 eV bandgap PbS QDs as intrinsic light absorber layers, achieved an almost ideal bifactor approaching 93% and decent detectivities of 1.63 × 10 11 Jones from ITO illumination and 1.86 × 10 11 Jones from silver nanowire (Ag NW) illumination at 1370 nm. Therefore, this work provides a facile approach for the design of bifacial all‐QD homojunction photodiodes, broadening their potential applications in advanced QD optoelectronic systems.

Advanced Functional MaterialsVol. 35(16)
Hong Kong Polytechnic University (HK), Queensland University of Technology (AU), University of South Australia (AU), UNSW Sydney (AU), Division of Materials Science and Engineering (AU), Wuhan National Laboratory for Optoelectronics (CN), Huazhong University of Science and Technology (CN), RMIT University (AU), Macquarie University (AU)
Affordable and clean energy
Openalex Percentile: Top 25%
Quantum Dots Synthesis And Properties
0.82
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