Fabrication of Silicon Structures with Specified Fano Resonance Characteristics

We study the effect of technological parameters on the characteristics of the Fano resonance in semiconductor structures formed on silicon single-crystal substrates using thermal diffusion of boron. The Fano resonance is investigated using Raman spectroscopy. It is shown that the formation of porous silicon films on the surface of a single-crystal substrate expands the possibilities of fabricating structures with specified Fano resonance parameters, compared to samples without a porous film.