Transmission Electron Microscopy of InGaAs/GaAs Quantum Dots Grown in a Bi Vapor Flow
Transmission electron microscopy is used to study the formation of InGaAs/GaAs quantum dots by molecular beam epitaxy under the influence of a Bi vapor flow on the growth surface at different temperatures of the GaAs substrate. Mixed-dimensional nanostructures (0D/2D) are found. Energy-dispersive X-ray spectroscopy demonstrates that Bi acts as a surfactant and is not trapped by the growing layers.
Authors
- I. N. Trunkin (ORCID: https://orcid.org/0000-0003-3470-5036)
- И. П. Казаков
Institutions
- P.N. Lebedev Physical Institute of the Russian Academy of Sciences (RU)
- Kurchatov Institute (RU)
Publication Details
- Journal
- Bulletin of the Lebedev Physics Institute
- Published
- 2024-11-01
- DOI
- https://doi.org/10.3103/s1068335624601067
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00