Exciton Collimation, Focusing and Trapping Using Complex Transition Metal Dichalcogenide Lateral Heterojunctions

Abstract Controlling the motion of neutral excitons in optically active media is a mandatory development to enable the conception of advanced circuits and devices for applications in excitronics, quantum photonics, and optoelectronics. Recently, proof of unidirectional exciton transport from high‐ to low‐bandgap material is evidenced using a high‐quality lateral heterostructure separating transition metal dichalcogenide monolayers (TMD‐MLs). In this paper, by combining room‐temperature micro‐photoluminescence far‐field imaging with a statistical description of exciton transport, the underlying excitonic local distribution and fluxes taking place near lateral heterojunctions are unveiled. The complex 2D excitonic transport properties found near a linear interface separating WSe 2 from MoSe 2 TMD‐MLs are studied and reveal two distinct diffusion regimes profoundly affecting the effective diffusion length. Then, it is shown that combining two and three of these interfaces, allows advanced in‐plane control of the excitonic distribution and flux over large distances. Exciton focalization and trapping, allowing an increase in the local exciton density up to three orders of magnitude are demonstrated. Finally, flux collimation is achieved with the formation of parallel current lines extending a few micrometers away from the source. We believe that the deterministic shaping and positioning of the exciton distribution and flux shown here will be key toward the conception of realistic excitronic devices.

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Publication Details

Journal
Advanced Optical Materials
Published
2024-12-25
DOI
https://doi.org/10.1002/adom.202403009
Citations
4
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.47

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article

Exciton Collimation, Focusing and Trapping Using Complex Transition Metal Dichalcogenide Lateral Heterojunctions

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4 citations
Advanced Optical Materials
2D Materials and Applications
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article

Exciton Collimation, Focusing and Trapping Using Complex Transition Metal Dichalcogenide Lateral Heterojunctions

Ioannis Paradisanos, Hassan Lamsaadi, Ziyang Gan, Bernhard Urbaszek, Gonzague Agez, Dorian Béret, Antony George, Nicolas Combe, Jean‐Marie Poumirol, Takashi Taniguchi, X. Marie, Vincent Paillard, P. Renucci, Aurélien Cuche, Andrey Turchanin, Delphine Lagarde, Kenji Watanabe, Laurent Lombez
article en
4 citations

Abstract

Abstract Controlling the motion of neutral excitons in optically active media is a mandatory development to enable the conception of advanced circuits and devices for applications in excitronics, quantum photonics, and optoelectronics. Recently, proof of unidirectional exciton transport from high‐ to low‐bandgap material is evidenced using a high‐quality lateral heterostructure separating transition metal dichalcogenide monolayers (TMD‐MLs). In this paper, by combining room‐temperature micro‐photoluminescence far‐field imaging with a statistical description of exciton transport, the underlying excitonic local distribution and fluxes taking place near lateral heterojunctions are unveiled. The complex 2D excitonic transport properties found near a linear interface separating WSe 2 from MoSe 2 TMD‐MLs are studied and reveal two distinct diffusion regimes profoundly affecting the effective diffusion length. Then, it is shown that combining two and three of these interfaces, allows advanced in‐plane control of the excitonic distribution and flux over large distances. Exciton focalization and trapping, allowing an increase in the local exciton density up to three orders of magnitude are demonstrated. Finally, flux collimation is achieved with the formation of parallel current lines extending a few micrometers away from the source. We believe that the deterministic shaping and positioning of the exciton distribution and flux shown here will be key toward the conception of realistic excitronic devices.

Advanced Optical MaterialsVol. 13(10)
Centre National de la Recherche Scientifique (FR), Université Toulouse III - Paul Sabatier (FR), Université Fédérale de Toulouse Midi-Pyrénées (FR), National Institute for Materials Science (JP), Leibniz Institute of Photonic Technology (DE), Technische Universität Darmstadt (DE), Centre d’Élaboration de Matériaux et d’Études Structurales (FR), Laboratoire de Physique et Chimie des Nano-Objets (FR), Friedrich Schiller University Jena (DE), Foundation for Research and Technology Hellas (GR)
Deutsche Forschungsgemeinschaft, Agence Nationale de la Recherche
Openalex Percentile: Top 37%
2D Materials and Applications
0.47
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