Performance Analysis of Solid-state Dye Sensitized Solar Cell with Sb<sub>2</sub>S<sub>3</sub> as Novel Hole Transport Material

Solid-state dye-sensitized solar cell (ss-DSSC) has drawn the recent contemplation of photovoltaic (PV) fraternity as a viable substitute for fluid electrolyte for improving power generation efficiency, durability and minimizing instability in dye-sensitive solar cells. Nevertheless, ss-DSSC suffers from poor performance, which can be improved by including a hole transport layer. This work presents device modelling of a Al/FTO/TiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>/Z907/Sb<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>S<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>/Ni ss-DSSC with antimony trisulphide (Sb<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>S<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>) as a novel hole conductor. The PV characteristics of the ss-DSSC covering the influence of charge transport layer (Electron and hole transport layers) thicknesses, doping concentration together with defect density of hole transport material (HTM), and ambient temperature are evaluated by means of the SCAPS-1D software package. The estimated results provide PV performance parameters with voltage in open circuit (VOC) of 1.28 V, current density in short circuit (JSC) of 15.97 mA/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>, fill factor (FF) of 84.15% and efficiency of 17.23% in proposed structure, highlighting the potential of Sb<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>S<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>as HTM. Consequently, these results might offer a valuable perspective for creating innovative, affordable, and extremely effective ss-DSSCs.

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Publication Details

Published
2024-09-12
DOI
https://doi.org/10.1109/peeiacon63629.2024.10800733
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
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article

Performance Analysis of Solid-state Dye Sensitized Solar Cell with Sb2S3 as Novel Hole Transport Material

Most. Marzia Khatun, Sumaiya Kabir, Muhammad Shahriar Bashar, Md. Saiful Islam
Chalcogenide Semiconductor Thin Films
article

Performance Analysis of Solid-state Dye Sensitized Solar Cell with Sb2S3 as Novel Hole Transport Material

Most. Marzia Khatun, Sumaiya Kabir, Muhammad Shahriar Bashar, Md. Saiful Islam
article en

Abstract

Solid-state dye-sensitized solar cell (ss-DSSC) has drawn the recent contemplation of photovoltaic (PV) fraternity as a viable substitute for fluid electrolyte for improving power generation efficiency, durability and minimizing instability in dye-sensitive solar cells. Nevertheless, ss-DSSC suffers from poor performance, which can be improved by including a hole transport layer. This work presents device modelling of a Al/FTO/TiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>/Z907/Sb<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>S<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>/Ni ss-DSSC with antimony trisulphide (Sb<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>S<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>) as a novel hole conductor. The PV characteristics of the ss-DSSC covering the influence of charge transport layer (Electron and hole transport layers) thicknesses, doping concentration together with defect density of hole transport material (HTM), and ambient temperature are evaluated by means of the SCAPS-1D software package. The estimated results provide PV performance parameters with voltage in open circuit (VOC) of 1.28 V, current density in short circuit (JSC) of 15.97 mA/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>, fill factor (FF) of 84.15% and efficiency of 17.23% in proposed structure, highlighting the potential of Sb<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>S<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>as HTM. Consequently, these results might offer a valuable perspective for creating innovative, affordable, and extremely effective ss-DSSCs.

University Grants Commission of Bangladesh
Openalex Percentile: Top 78%
Chalcogenide Semiconductor Thin Films
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