Optimizing MoTe<sub>2</sub> Photovoltaic: A Simulation-Based Exploration of Sb<sub>2</sub>S<sub>3</sub> HTL for Efficiency Enhancement
This work investigates the behavior of MoTe2 solar structure using the SCAPS-1D program and a Sb2S3 HTL material. The choice of MoTe2 is motivated by its high optical absorption, efficiency, affordability, and stable operation. The study compares a novel solar cell structure (FTO/CdS/MoTe<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>/Sb<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>S<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>) with a conventional baseline structure (FTO/CdS/MoTe<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>). The new structure achieves notable advancements by examining various parameters, including HTL layer thickness, temperature, doping density, and surface recombination velocity. The device exhibits an efficiency of 40.33%, a voltage at an open circuit of 1.13 V, a current at short circuit of 40.78 mA/cm2, and a fill factor of 87.63%. The baseline structure features a Voc measuring 0.95 V, FF at 81.09%, J<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sc</inf> at 38.15 mA/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>, and efficiency at 29.35%. The integration of the Sb<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>S<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> layer effectively lessens carrier recombination losses, indicating a promising pathway for achieving enhanced efficiency, affordable MoTe<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>-based solar cells with Sb<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>S<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> as the HTL.
Authors
- A. Z. M. Touhidul Islam (ORCID: https://orcid.org/0000-0002-0613-016X)
- Md. Arifur Rahman (ORCID: https://orcid.org/0000-0003-1813-1255)
Institutions
- Bangladesh University of Engineering and Technology (BD)
- University of Rajshahi (BD)
Publication Details
- Published
- 2024-09-12
- DOI
- https://doi.org/10.1109/peeiacon63629.2024.10800643
- Citations
- 2
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.42