Study on E-Mode AlGaN/GaN High-Electron Mobility Transistor with Composite P-GaN Cap and Recessed Gate Structure

This study investigates a normally-off AlGaN/GaN High-Electron Mobility Transistor with P-GaN cap layer and recessed gate techniques incorporated in a composite structure. The hybrid structure significantly elevates the threshold voltage to 2.43 V and demonstrates excellent off-state properties with very low leakage current and power dissipation compared to individual P-GaN cap and recessed gate structure. An outstanding subthreshold swing of 34.12 mV/decade is achieved, and the breakdown voltage is increased to 1063 V. These findings demonstrate improved performance of the composite structure for high-power switching applications.