Performance Benchmark of Three-Phase Neutral Point Clamped Inverter Using Si IGBTs, SiC MOSFETs and GaN HEMTs for Motor Drive Applications

The introduction of wide bandgap devices into the field of power electronics has led to significant improvements in motor drive systems due to remarkable benefits like high switching frequency, low conduction loss, high efficiency, and improved thermal performance. This paper investigates the potential of integrating Si-IGBT, SiC-MOSFET, and Gallium nitride (GaN) HEMT power devices with 650V class into a 3-level (3-L) neutral point clamped (NPC) inverter fed induction motor drive. Comparative evaluations are conducted on the switching performance, inverter efficiency, and power loss performance of the power devices. Out of three technologies, GaN outshines itself with its superior switching performance in comparison to Si and SiC devices. The GaN based inverter reached a 98.74% efficiency with a heat sink temperature of $30^{\circ} \mathrm{C}$. The total power loss of the motor drive converter is 34.58 W at 55 kHz with GaN device, which is 1.21% less than SiC and 57.87% less than Si, respectively. The aim of this paper is to simplify the decision-making process in selecting the best switches for motor drive applications in order to enhance certain performance metrics. The simulation study is conducted by using realistic dynamic models of power semiconductor devices taken from the manufacturer’s datasheet and verified in the PLECS software environment.