Effect of Dye-Loading Time on the Performance of ZnO Based Dye Sensitized Solar Cell

Dye-sensitized solar cells (DSSCs) represent a burgeoning photovoltaic technology with significant commercial promise due to their unique attributes, including semi-transparency, cost-effectiveness in manufacturing, simple fabrication methodologies, and strong performance in low-light conditions. The principal challenge facing DSSCs pertains to enhancing their efficiency and stability to bolster their viability as a sustainable energy solution. This research explores the impact of varying dye loading durations on the performance of ZnO-based dye-sensitized solar cells, which are fabricated on the FTO substrate. The study encompasses the analysis of I-V characteristics under both dark and illumination conditions, involving four distinct cells. During the cell fabrication process, the electrochemical Deposition (EPD) technique are employed for metal oxide deposition onto the electrode. A critical post-deposition step involved the application of hot compression at 60 MPa and room temperature to ensure the formation of a uniform, crack-free layer. Notably, the four sample cells underwent different dye immersion durations-30 minutes, 1 hour, 2 hours, and 3 hours-as part of the fabrication process. Performance parameters under dark conditions were extracted using the principles of thermionic emission Theory. Additionally, series resistance and shunt resistance were calculated from the I-V data under illumination conditions utilizing the Lambert W function. Notably, the cell with a 1-hour dye-loading period demonstrated superior performance, achieving a 2.7% conversion efficiency, a short-circuit current density of 8.9 <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{mA}/\text{cm}{}^{\text{2}}$</tex>, an open-circuit voltage <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(V_{oc})$</tex> of 0.53 V, and a fill factor (F F) of 0.56. These findings hold significant promise in advancing the efficiency of DSSCs as a sustainable energy solution.

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Published
2024-09-12
DOI
https://doi.org/10.1109/peeiacon63629.2024.10800692
Primary Topic
Chalcogenide Semiconductor Thin Films
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article
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article

Effect of Dye-Loading Time on the Performance of ZnO Based Dye Sensitized Solar Cell

Md. Shamimul Haque Choudhury, Tetsuo Soga, Sheik Erfan Ahmed Himu, Samiul Hoque Kashfi et al.
Chalcogenide Semiconductor Thin Films
article

Effect of Dye-Loading Time on the Performance of ZnO Based Dye Sensitized Solar Cell

Md. Shamimul Haque Choudhury, Tetsuo Soga, Sheik Erfan Ahmed Himu, Samiul Hoque Kashfi, Ridowanur Rashid Tushar
article en

Abstract

Dye-sensitized solar cells (DSSCs) represent a burgeoning photovoltaic technology with significant commercial promise due to their unique attributes, including semi-transparency, cost-effectiveness in manufacturing, simple fabrication methodologies, and strong performance in low-light conditions. The principal challenge facing DSSCs pertains to enhancing their efficiency and stability to bolster their viability as a sustainable energy solution. This research explores the impact of varying dye loading durations on the performance of ZnO-based dye-sensitized solar cells, which are fabricated on the FTO substrate. The study encompasses the analysis of I-V characteristics under both dark and illumination conditions, involving four distinct cells. During the cell fabrication process, the electrochemical Deposition (EPD) technique are employed for metal oxide deposition onto the electrode. A critical post-deposition step involved the application of hot compression at 60 MPa and room temperature to ensure the formation of a uniform, crack-free layer. Notably, the four sample cells underwent different dye immersion durations-30 minutes, 1 hour, 2 hours, and 3 hours-as part of the fabrication process. Performance parameters under dark conditions were extracted using the principles of thermionic emission Theory. Additionally, series resistance and shunt resistance were calculated from the I-V data under illumination conditions utilizing the Lambert W function. Notably, the cell with a 1-hour dye-loading period demonstrated superior performance, achieving a 2.7% conversion efficiency, a short-circuit current density of 8.9 <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{mA}/\text{cm}{}^{\text{2}}$</tex>, an open-circuit voltage <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(V_{oc})$</tex> of 0.53 V, and a fill factor (F F) of 0.56. These findings hold significant promise in advancing the efficiency of DSSCs as a sustainable energy solution.

International Islamic University Chittagong (BD), Nagoya Institute of Technology (JP)
Affordable and clean energy
Openalex Percentile: Top 78%
Chalcogenide Semiconductor Thin Films
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