Electronic Assessment of Novel Nanosheet RFET With Dual-Doped Source/Drain

To overcome the limitation of lower on-current in conventional Schottky barrier reconfigurable field-effect transistors (SB-RFETs) with metal source/drain, a novel nanosheet reconfigurable field-effect transistor (RFET) with dual-doped source/drain (DD-RFET) is proposed in this work for the first time. Compared to the conventional SB-RFET, the on-state current <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\text {on}}$ </tex-math></inline-formula> improves by <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$61.4\times $ </tex-math></inline-formula> for n-type program and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$42.8\times $ </tex-math></inline-formula> for p-type program, respectively. The thermal carrier emission instead of Schottky tunneling is demonstrated to contribute for the improved driven current in the proposed DD-RFET. The impact of geometric sizes and materials, such as control-gate length (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${L}_{\text {CG}}$ </tex-math></inline-formula>), program gate length (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${L}_{\text {PG}}$ </tex-math></inline-formula>), and spacer dielectric constant (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${K}_{\text {SP}}$ </tex-math></inline-formula>), is investigated in detail. The key metrics, including on-state current <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\text {on}}$ </tex-math></inline-formula>, off-sate current <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\text {off}}$ </tex-math></inline-formula>, maximum of transconductance <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text {g}_{\max }$ </tex-math></inline-formula>, and intrinsic delay <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\tau _{\text {d}}$ </tex-math></inline-formula>, are used to evaluate the performance during optimization. This article provides solutions for RFET in high-performance applications.