A 1.48-fs FoM Analog Capacitorless-LDO With Cascade-Inverter-Based Pseudo-Power Transistor

A capacitorless analog low-dropout regulator (CL-LDO) with cascade-inverter-based pseudo-power transistor is presented in this letter. The proposed architecture supports ultralow-voltage operation, fast transient response, high current efficiency, and high loop gain with low quiescent current along the full load range. The proposed CL-LDO can be easily implemented without any external transient-enhancement circuit. The circuit is fabricated in a 65-nm LP CMOS process with an active area of 0.00782 mm2. The minimum supply voltage can be as low as 0.5 V. The minimum dropout voltage is 20 mV. Under a 1-V supply, the undershoot voltage with 100-mV dropout voltage is 87 mV and settles down within 10 ns when the load current increases from <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$100~\boldsymbol {\mu }$ </tex-math></inline-formula> A to 50 mA within 5-ns edge time. The measured quiescent current is <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$4~\boldsymbol {\mu }$ </tex-math></inline-formula> A. The transient figure of merit is 1.48 fs.

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Publication Details

Journal
IEEE Solid-State Circuits Letters
Published
2024-12-25
DOI
https://doi.org/10.1109/lssc.2024.3522785
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
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article

A 1.48-fs FoM Analog Capacitorless-LDO With Cascade-Inverter-Based Pseudo-Power Transistor

Ka Nang Leung, Hing Tai Chen, Xun Liu
IEEE Solid-State Circuits Letters
Semiconductor materials and devices
article

A 1.48-fs FoM Analog Capacitorless-LDO With Cascade-Inverter-Based Pseudo-Power Transistor

Ka Nang Leung, Hing Tai Chen, Xun Liu
article en

Abstract

A capacitorless analog low-dropout regulator (CL-LDO) with cascade-inverter-based pseudo-power transistor is presented in this letter. The proposed architecture supports ultralow-voltage operation, fast transient response, high current efficiency, and high loop gain with low quiescent current along the full load range. The proposed CL-LDO can be easily implemented without any external transient-enhancement circuit. The circuit is fabricated in a 65-nm LP CMOS process with an active area of 0.00782 mm2. The minimum supply voltage can be as low as 0.5 V. The minimum dropout voltage is 20 mV. Under a 1-V supply, the undershoot voltage with 100-mV dropout voltage is 87 mV and settles down within 10 ns when the load current increases from <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$100~\boldsymbol {\mu }$ </tex-math></inline-formula> A to 50 mA within 5-ns edge time. The measured quiescent current is <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$4~\boldsymbol {\mu }$ </tex-math></inline-formula> A. The transient figure of merit is 1.48 fs.

IEEE Solid-State Circuits LettersVol. 8
Chinese University of Hong Kong (HK), Chinese University of Hong Kong, Shenzhen (CN)
Affordable and clean energy
Openalex Percentile: Top 78%
Semiconductor materials and devices
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