Design and development Analysis of Deep UV photodetectors

The development of deep-ultraviolet (DUV) photodetectors has gained significant attention due to their broad applications. With the increasing demand for high-performance detectors that can operate in harsh environments, research on optimizing their materials and structural design has become a critical focus. This paper introduces the basic working principle, structural composition, and performance evaluation criteria of deep-ultraviolet (DUV) photodetectors, focusing on the analysis of the optimization of materials and structure to improve the performance of detectors. Deep ultraviolet photodetectors are based on the photovoltaic effect of semiconductor materials to realize the conversion of photoelectric signals. It is shown that the photo responsiveness and stability of the photodetector can be effectively improved by introducing a composite film of the rare earth element cerium tungstate (Ce-WO3). In addition, the structural optimization of graphene-β-Ga2O3 heterojunction and n-Ga2O3/p-GaN heterojunction is employed to significantly improve the spectral selectivity, responsivity and long-time stability of the detector. This paper also explores the potential of these improvements for applications in the fields of UV communications, UV optoelectronic integrated circuits, environmental monitoring and military spaceflight.