Single-electron charge sensor self-aligned to a quantum dot array by double-gate patterning process

Abstract The high sensitivity of a single electron transistor (SET) is essential to faithfully identify the number of electrons in a quantum dot (QD) towards a silicon-based quantum computer. The sensitivity depends on the critical dimension between the SET and the QD, which is limited by the resolution of the electron beam lithography and the layer-to-layer alignment accuracy. Here, we report integration of an SET charge sensor with a QD array by repeating the self-aligned double-gate patterning processes. This fabrication technique allowed us to place the SET adjacent to the QD array beyond the lithography resolution, enabling sensitive charge sensing. We confirm that our device can detect single electrons in the QD and demonstrate real-time detections of electron tunneling by monitoring the SET current.

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Publication Details

Journal
Japanese Journal of Applied Physics
Published
2024-12-25
DOI
https://doi.org/10.35848/1347-4065/ada348
Citations
2
Primary Topic
Quantum and electron transport phenomena
Type
article
Field-Weighted Citation Impact
0.68

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article

Single-electron charge sensor self-aligned to a quantum dot array by double-gate patterning process

Jun Yoneda, Digh Hisamoto, Raisei Mizokuchi, Hiroyuki Mizuno et al.
2 citations
Japanese Journal of Applied Physics
Quantum and electron transport phenomena
0.68
article

Single-electron charge sensor self-aligned to a quantum dot array by double-gate patterning process

Jun Yoneda, Digh Hisamoto, Raisei Mizokuchi, Hiroyuki Mizuno, Shinichi Saito, Takeru Utsugi, Noriyuki Lee, Tetsuo Kodera, Itaru Yanagi, Takuma Kuno, Ryuta Tsuchiya, Toshiyuki Mine
article en
2 citations

Abstract

Abstract The high sensitivity of a single electron transistor (SET) is essential to faithfully identify the number of electrons in a quantum dot (QD) towards a silicon-based quantum computer. The sensitivity depends on the critical dimension between the SET and the QD, which is limited by the resolution of the electron beam lithography and the layer-to-layer alignment accuracy. Here, we report integration of an SET charge sensor with a QD array by repeating the self-aligned double-gate patterning processes. This fabrication technique allowed us to place the SET adjacent to the QD array beyond the lithography resolution, enabling sensitive charge sensing. We confirm that our device can detect single electrons in the QD and demonstrate real-time detections of electron tunneling by monitoring the SET current.

Japanese Journal of Applied PhysicsVol. 64(1)
Tokyo Institute of Technology (JP), Institute of Science Tokyo (JP), Hitachi (Japan) (JP), The University of Tokyo (JP)
Japan Science and Technology Corporation, Japan Society for the Promotion of Science, Japan Science and Technology Agency
Affordable and clean energy
Openalex Percentile: Top 29%
Quantum and electron transport phenomena
0.68
DOIOpen Access PDFOpenAlex
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Single-electron charge sensor self-aligned to a quantum dot array by double-gate patterning process — Jun Yoneda, Digh Hisamoto, et al. · Japanese Journal of Applied Physics (2024) | TGRS Research Map | TGRS