Potassium Iodide Passivation Enabling Performance Improvement of CsCu₂I₃-Based LEDs
Ternary copper halide CsCu<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{2}}}$ </tex-math></inline-formula>I<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{3}}}$ </tex-math></inline-formula> emerges as a highly promising candidate for eco-friendly light-emitting diodes (LEDs), but the electroluminescent performance is limited by defect-related nonradiative losses and disordered crystallization. Herein, we develop a potassium iodide (KI)-modified engineering of CsCu<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{2}}}$ </tex-math></inline-formula>I<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{3}}}$ </tex-math></inline-formula> emitters to passivate the defects by compensating for any halide vacancies, and reduce trap state density. Meanwhile, this strategy can optimize the crystallization process of CsCu<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{2}}}$ </tex-math></inline-formula>I<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{3}}}$ </tex-math></inline-formula> to obtain continuous high-quality CsCu<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{2}}}$ </tex-math></inline-formula>I<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{3}}}$ </tex-math></inline-formula> films, which is conductive to suppressing leakage current of corresponding devices. Benefitting from the suppression of nonradiative recombination due to the reduced halide vacancies, and improved film morphology of CsCu<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{2}}}$ </tex-math></inline-formula>I<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{3}}}$ </tex-math></inline-formula> by optimizing the crystallization process of CsCu<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{2}}}$ </tex-math></inline-formula>I<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{3}}}$ </tex-math></inline-formula>, the EQE of corresponding LED is largely improved from 0.02% to 0.065%. The results highlight the great potential of KI passivation for high performance eco-friendly CsCu <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{2}}}$ </tex-math></inline-formula>I<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{3}}}$ </tex-math></inline-formula> based LED.
Authors
- Y. Wei (ORCID: https://orcid.org/0009-0002-8137-2203)
- Lei Mao (ORCID: https://orcid.org/0009-0005-5714-0260)
- Yuning Zhang (ORCID: https://orcid.org/0000-0003-2213-2859)
- Fan Fang (ORCID: https://orcid.org/0000-0001-5919-7678)
- Jiangyong Pan (ORCID: https://orcid.org/0000-0002-5639-0621)
- Haitao Liu (ORCID: https://orcid.org/0000-0001-8355-0996)
- Jing Chen (ORCID: https://orcid.org/0000-0002-0024-4561)
- Chengjun Liu (ORCID: https://orcid.org/0000-0003-3826-1049)
- Ziyang Liu (ORCID: https://orcid.org/0000-0002-9905-3318)
- Jia Lu (ORCID: https://orcid.org/0000-0001-7631-475X)
- Yunkang Cui
- Zhenghao Gao
- Lixi Wang (ORCID: https://orcid.org/0000-0003-4481-1924)
- Xiuwei Huo
- Jianhua Chang (ORCID: https://orcid.org/0000-0003-4834-2141)
- Yujie Qin
Institutions
- Nanjing University of Information Science and Technology (CN)
- Nanjing Institute of Technology (CN)
- Nanjing University of Science and Technology (CN)
- Shenzhen Technology University (CN)
- Southeast University (CN)
Publication Details
- Journal
- IEEE Electron Device Letters
- Published
- 2024-12-25
- DOI
- https://doi.org/10.1109/led.2024.3520140
- Citations
- 1
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.21
Funders
- National Natural Science Foundation of China
- Basic Research Program of Jiangsu Province