Potassium Iodide Passivation Enabling Performance Improvement of CsCu₂I₃-Based LEDs

Ternary copper halide CsCu<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{2}}}$ </tex-math></inline-formula>I<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{3}}}$ </tex-math></inline-formula> emerges as a highly promising candidate for eco-friendly light-emitting diodes (LEDs), but the electroluminescent performance is limited by defect-related nonradiative losses and disordered crystallization. Herein, we develop a potassium iodide (KI)-modified engineering of CsCu<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{2}}}$ </tex-math></inline-formula>I<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{3}}}$ </tex-math></inline-formula> emitters to passivate the defects by compensating for any halide vacancies, and reduce trap state density. Meanwhile, this strategy can optimize the crystallization process of CsCu<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{2}}}$ </tex-math></inline-formula>I<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{3}}}$ </tex-math></inline-formula> to obtain continuous high-quality CsCu<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{2}}}$ </tex-math></inline-formula>I<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{3}}}$ </tex-math></inline-formula> films, which is conductive to suppressing leakage current of corresponding devices. Benefitting from the suppression of nonradiative recombination due to the reduced halide vacancies, and improved film morphology of CsCu<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{2}}}$ </tex-math></inline-formula>I<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{3}}}$ </tex-math></inline-formula> by optimizing the crystallization process of CsCu<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{2}}}$ </tex-math></inline-formula>I<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{3}}}$ </tex-math></inline-formula>, the EQE of corresponding LED is largely improved from 0.02% to 0.065%. The results highlight the great potential of KI passivation for high performance eco-friendly CsCu <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{2}}}$ </tex-math></inline-formula>I<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{3}}}$ </tex-math></inline-formula> based LED.

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Publication Details

Journal
IEEE Electron Device Letters
Published
2024-12-25
DOI
https://doi.org/10.1109/led.2024.3520140
Citations
1
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
0.21

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article

Potassium Iodide Passivation Enabling Performance Improvement of CsCu₂I₃-Based LEDs

Y. Wei, Lei Mao, Yuning Zhang, Fan Fang et al.
1 citations
IEEE Electron Device Letters
Chalcogenide Semiconductor Thin Films
0.21
article

Potassium Iodide Passivation Enabling Performance Improvement of CsCu₂I₃-Based LEDs

Y. Wei, Lei Mao, Yuning Zhang, Fan Fang, Jiangyong Pan, Haitao Liu, Jing Chen, Chengjun Liu, Ziyang Liu, Jia Lu, Yunkang Cui, Zhenghao Gao, Lixi Wang, Xiuwei Huo, Jianhua Chang, Yujie Qin
article en
1 citations

Abstract

Ternary copper halide CsCu<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{2}}}$ </tex-math></inline-formula>I<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{3}}}$ </tex-math></inline-formula> emerges as a highly promising candidate for eco-friendly light-emitting diodes (LEDs), but the electroluminescent performance is limited by defect-related nonradiative losses and disordered crystallization. Herein, we develop a potassium iodide (KI)-modified engineering of CsCu<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{2}}}$ </tex-math></inline-formula>I<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{3}}}$ </tex-math></inline-formula> emitters to passivate the defects by compensating for any halide vacancies, and reduce trap state density. Meanwhile, this strategy can optimize the crystallization process of CsCu<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{2}}}$ </tex-math></inline-formula>I<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{3}}}$ </tex-math></inline-formula> to obtain continuous high-quality CsCu<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{2}}}$ </tex-math></inline-formula>I<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{3}}}$ </tex-math></inline-formula> films, which is conductive to suppressing leakage current of corresponding devices. Benefitting from the suppression of nonradiative recombination due to the reduced halide vacancies, and improved film morphology of CsCu<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{2}}}$ </tex-math></inline-formula>I<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{3}}}$ </tex-math></inline-formula> by optimizing the crystallization process of CsCu<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{2}}}$ </tex-math></inline-formula>I<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{3}}}$ </tex-math></inline-formula>, the EQE of corresponding LED is largely improved from 0.02% to 0.065%. The results highlight the great potential of KI passivation for high performance eco-friendly CsCu <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{2}}}$ </tex-math></inline-formula>I<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {{3}}}$ </tex-math></inline-formula> based LED.

IEEE Electron Device LettersVol. 46(2)
Nanjing University of Information Science and Technology (CN), Nanjing Institute of Technology (CN), Nanjing University of Science and Technology (CN), Shenzhen Technology University (CN), Southeast University (CN)
National Natural Science Foundation of China, Basic Research Program of Jiangsu Province
Openalex Percentile: Top 45%
Chalcogenide Semiconductor Thin Films
0.21
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