Demonstration of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub>-Based Thermal Neutron Detector
Compact, accurate, and durable thermal neutron detectors utilizing ultra-wide bandgap semiconductors, such as gallium oxide (Ga2O<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{{3}}\text {)}$ </tex-math></inline-formula> and diamond, hold great promise for the safe and long-term near-core monitoring of nuclear reactors in harsh environments. However, achieving low device leakage and efficient neutron detection remains a significant challenge. In this work, we demonstrate the first thermal neutron detector based on a large-area (9 mm<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{{2}}\text {)}$ </tex-math></inline-formula> p-NiO/<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga2O3 heterojunction diode. The device benefits from a low interfacial trap density, as demonstrated by the slight capacitance-frequency dispersion and low 1/f noise-equivalent power, resulting in an ultralow leakage current of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{-{8}}$ </tex-math></inline-formula> A (at −200 V). Consequently, it exhibits efficient charge collection efficiency for alpha particles (5.486 MeV) with an energy resolution of 10%. By integrating 10B film for neutron conversion, we achieved an intrinsic neutron detection efficiency of 0.82%, which approaches the predicted value from the Monte Carlo method, corresponding to 2.22% for thermal neutrons. These findings underscore the potential of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga2O3 for applications in advanced radiation monitoring.
Authors
- Size Chen (ORCID: https://orcid.org/0000-0002-3427-3870)
- Tao‐Sheng Li (ORCID: https://orcid.org/0000-0002-7653-8873)
- Lianxin Zhang (ORCID: https://orcid.org/0000-0002-5076-9518)
- Xinyi Pei
- Yuncheng Han (ORCID: https://orcid.org/0000-0002-3156-8251)
- Shulin Gu (ORCID: https://orcid.org/0000-0001-9322-5978)
- Ze Fang (ORCID: https://orcid.org/0009-0002-7781-1269)
- Rong Zhang (ORCID: https://orcid.org/0000-0003-0015-6331)
- Fangfang Ren (ORCID: https://orcid.org/0000-0001-5598-9512)
- Xiangdong Meng
- Jiandong Ye (ORCID: https://orcid.org/0000-0002-3985-6768)
- Dan Xiao (ORCID: https://orcid.org/0000-0001-7632-2901)
- Lei Ren (ORCID: https://orcid.org/0000-0003-1622-1003)
- Song Feng
- Rui Zhang (ORCID: https://orcid.org/0009-0004-2009-6561)
- Na Sun (ORCID: https://orcid.org/0009-0007-9765-4324)
Institutions
- Chinese Academy of Sciences (CN)
- Hefei Institutes of Physical Science (CN)
- Ministry of Education (SA)
- Nanjing University (CN)
- University of South China (CN)
Publication Details
- Journal
- IEEE Electron Device Letters
- Published
- 2024-12-25
- DOI
- https://doi.org/10.1109/led.2024.3522482
- Citations
- 7
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.83
Funders
- National Natural Science Foundation of China
- National Key Research and Development Program of China