Artificial Control of Giant Converse Magnetoelectric Effect in Spintronic Multiferroic Heterostructure
To develop voltage-controlled magnetization switching technologies for spintronics applications, a highly (422)-oriented Co<sub>2</sub>FeSi layer on top of the piezoelectric PMN-PT(011) is experimentally demonstrated by inserting a vanadium (V) ultra-thin layer. The strength of the growth-induced magnetic anisotropy of the (422)-oriented Co<sub>2</sub>FeSi layers can be artificially controlled by tuning the thicknesses of the inserted V and the grown Co<sub>2</sub>FeSi layers. As a result, a giant converse magnetoelectric effect (over 10<sup>-5</sup> s m<sup>-1</sup>) and a non-volatile binary state at zero electric field are simultaneously achieved in the (422)-oriented Co<sub>2</sub>FeSi/V/PMN-PT(011) multiferroic heterostructure. This study leads to a way toward magnetoresistive random-access-memory (MRAM) with a low power writing technology.
Authors
- Takamasa Usami (ORCID: https://orcid.org/0000-0001-9478-7331)
- Kohei Hamaya (ORCID: https://orcid.org/0000-0002-5473-6086)
- Shumpei Fujii
- Ryoichi Nakatani (ORCID: https://orcid.org/0000-0001-5020-4632)
- Yu Shiratsuchi (ORCID: https://orcid.org/0000-0002-8938-4869)
- S. Yamada (ORCID: https://orcid.org/0000-0001-6340-9151)
- Yuya Sanada
Institutions
- Spintronics Research Network of Japan (JP)
- The University of Osaka (JP)
Publication Details
- Journal
- Advanced Science
- Published
- 2024-12-25
- DOI
- https://doi.org/10.1002/advs.202413566
- Citations
- 7
- Primary Topic
- Multiferroics and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.83
Funders
- Toyota Physical and Chemical Research Institute
- Japan Society for the Promotion of Science
- Japan Science and Technology Agency
- Core Research for Evolutional Science and Technology