Optimization of CZT crystal growth by THM method

This work develops a numerical model for analyzing the growth conditions of Cd0.9Zn0.1Te crystals by the traveling heater method (THM) in a multi-zone electrodynamics gradient (EDG) furnace. The main focus is on determining the temperature profile and the thickness of the Te-rich solution to improve the structural homogeneity of the crystals and minimize defects. The work also proposes a dimensionless criterion based on the ratio of the thermal Rayleigh number (RaT) to the concentration Rayleigh number (RaC), which allows for evaluating the growth conditions. The calculations performed make it possible to determine the main technological parameters that ensure a nearly flat crystallization interface. The adequacy of the calculated thermal conditions was confirmed experimentally. The obtained samples showed characteristics suitable for manufacturing spectroscopic grade detectors.

Authors

Publication Details

Journal
Functional materials
Published
2024-12-18
DOI
https://doi.org/10.15407/fm31.04.574
Citations
1
Primary Topic
Advanced Semiconductor Detectors and Materials
Type
article
Field-Weighted Citation Impact
0.21
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article

Optimization of CZT crystal growth by THM method

I. A. Rybalka, С. Галкін, Oleksandr Kolesnikov, O. Lalayants
1 citations
Functional materials
Advanced Semiconductor Detectors and Materials
0.21
article

Optimization of CZT crystal growth by THM method

I. A. Rybalka, С. Галкін, Oleksandr Kolesnikov, O. Lalayants
article en
1 citations

Abstract

This work develops a numerical model for analyzing the growth conditions of Cd0.9Zn0.1Te crystals by the traveling heater method (THM) in a multi-zone electrodynamics gradient (EDG) furnace. The main focus is on determining the temperature profile and the thickness of the Te-rich solution to improve the structural homogeneity of the crystals and minimize defects. The work also proposes a dimensionless criterion based on the ratio of the thermal Rayleigh number (RaT) to the concentration Rayleigh number (RaC), which allows for evaluating the growth conditions. The calculations performed make it possible to determine the main technological parameters that ensure a nearly flat crystallization interface. The adequacy of the calculated thermal conditions was confirmed experimentally. The obtained samples showed characteristics suitable for manufacturing spectroscopic grade detectors.

Functional materialsVol. 31(4)
Openalex Percentile: Top 45%
Advanced Semiconductor Detectors and Materials
0.21
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