A 106~133 GHz Wideband Power Amplifier in 40-nm CMOS Process

This paper presents a wideband power amplifier operating in the frequency range of 106~133 GHz, using a common-source differential structure implemented in a 40-nm CMOS process. Each stage of the amplifier, excluding the output, is matched using a wideband transformer with a series inductor, and the output is matched to the maximum output load impedance using a balun. Measurement results show a maximum gain of 22.3 dB at 116 GHz, 3-dB bandwidth of 27 GHz, and output saturation power of 9.4 dBm. The power consumption is 76 mW at 1.1 V supply voltage, with a peak power added efficiency of 9.3 %. The chip area, excluding the pads, measures 595 μm×88 μm.