Temperature-dependent properties of Cu-doped ZnTe thin films deposited on ultra-thin glass substrates via RF magnetron sputtering

This study investigates the viability of Cu-doped ZnTe as a potential back surface field (BSF) layer on flexible CdTe thin-film solar cells, examining its structural, morphological, optical, and electrical properties. ZnTe, 5%, and 8% Cu-doped ZnTe were deposited on ultra-thin glass (UTG) substrates using the radio frequency (RF) magnetron sputtering approach at varying substrate temperatures from room temperature to 300 °C. The finding reveals that the surface morphology significantly changes as the substrate temperature increases. Besides, incorporating Cu into ZnTe resulted in a denser and rougher surface, likely due to material densification and accelerated grain growth at higher temperatures. X-ray diffraction (XRD) analysis indicated that the crystallite size of the ZnTe and Cu-doped ZnTe increased with higher temperatures. Optical spectroscopy results demonstrated an increase in the optical band gap of ZnTe with increasing substrate temperature, while Cu-doping introduced a significant variability in the bandgap, particularly at different doping levels. In terms of electrical properties, ZnTe thin films exhibited carrier concentrations around 10 14 cm −3 . Conversely, the introduction of 5% and 8% Cu into ZnTe increased carrier concentrations, ranging from 10 17 to 10 20 cm −3 , respectively, depending on substrate temperature and the amount of Cu concentration. Introducing Cu in the ZnTe structure may modify the characteristics of ZnTe thin films, potentially influencing its suitability as a BSF layer in CdTe solar cells by affecting its structural, optical, and electrical properties. • Adding 5% and 8% Cu to ZnTe enhanced carrier concentrations and conductivity. • Higher substrate temperatures during deposition led to larger crystallite sizes. • Band gap of ZnTe increased from 2.11 eV to 2.18 eV with higher temperatures. • XRD analysis showed improved crystallinity in ZnTe films with Cu at 300 °C. • Cu incorporation in ZnTe resulted in a denser and rougher morphology.

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Publication Details

Journal
Journal of Science Advanced Materials and Devices
Published
2024-12-24
DOI
https://doi.org/10.1016/j.jsamd.2024.100836
Primary Topic
Quantum Dots Synthesis And Properties
Type
article
Field-Weighted Citation Impact
0.00

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article

Temperature-dependent properties of Cu-doped ZnTe thin films deposited on ultra-thin glass substrates via RF magnetron sputtering

Muhammad Najib Harif, Mohd Natashah Norizan, Kazi Sajedur Rahman, Camellia Doroody et al.
Journal of Science Advanced Materials and Devices
Quantum Dots Synthesis And Properties
article

Temperature-dependent properties of Cu-doped ZnTe thin films deposited on ultra-thin glass substrates via RF magnetron sputtering

Muhammad Najib Harif, Mohd Natashah Norizan, Kazi Sajedur Rahman, Camellia Doroody, Boon Kar Yap, Tiong Sieh Kiong, Mohd Nazri Abd Rahman, Ahmad Wafi Mahmood Zuhdi, Nur Irwany Ahmad
article en

Abstract

This study investigates the viability of Cu-doped ZnTe as a potential back surface field (BSF) layer on flexible CdTe thin-film solar cells, examining its structural, morphological, optical, and electrical properties. ZnTe, 5%, and 8% Cu-doped ZnTe were deposited on ultra-thin glass (UTG) substrates using the radio frequency (RF) magnetron sputtering approach at varying substrate temperatures from room temperature to 300 °C. The finding reveals that the surface morphology significantly changes as the substrate temperature increases. Besides, incorporating Cu into ZnTe resulted in a denser and rougher surface, likely due to material densification and accelerated grain growth at higher temperatures. X-ray diffraction (XRD) analysis indicated that the crystallite size of the ZnTe and Cu-doped ZnTe increased with higher temperatures. Optical spectroscopy results demonstrated an increase in the optical band gap of ZnTe with increasing substrate temperature, while Cu-doping introduced a significant variability in the bandgap, particularly at different doping levels. In terms of electrical properties, ZnTe thin films exhibited carrier concentrations around 10 14 cm −3 . Conversely, the introduction of 5% and 8% Cu into ZnTe increased carrier concentrations, ranging from 10 17 to 10 20 cm −3 , respectively, depending on substrate temperature and the amount of Cu concentration. Introducing Cu in the ZnTe structure may modify the characteristics of ZnTe thin films, potentially influencing its suitability as a BSF layer in CdTe solar cells by affecting its structural, optical, and electrical properties. • Adding 5% and 8% Cu to ZnTe enhanced carrier concentrations and conductivity. • Higher substrate temperatures during deposition led to larger crystallite sizes. • Band gap of ZnTe increased from 2.11 eV to 2.18 eV with higher temperatures. • XRD analysis showed improved crystallinity in ZnTe films with Cu at 300 °C. • Cu incorporation in ZnTe resulted in a denser and rougher morphology.

Journal of Science Advanced Materials and DevicesVol. 10(1)
Lovely Professional University (IN), Universiti Sains Malaysia (MY), Malaysia Theological Seminary (MY), Zhejiang Medicine (China) (CN), Universiti Malaysia Perlis (MY), Chitkara University (IN), Universiti Tenaga Nasional (MY), Universiti Teknologi MARA (MY), Tenaga Nasional Berhad (Malaysia) (MY), National University of Malaysia (MY)
Tenaga Nasional Berhad, Ministry of Higher Education, Malaysia
Openalex Percentile: Top 84%
Quantum Dots Synthesis And Properties
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