Multi-channel AlN/GaN Schottky barrier diodes

Abstract This paper reports Schottky barrier diodes (SBDs) based on a multi-channel AlN/GaN heterostructure grown by metal-organic chemical vapor deposition. The proposed heterostructure with five channels achieved an extremely low R sh (69 Ω/□), thanks to a high <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mi>N</mml:mi> <mml:mi mathvariant="italic">s</mml:mi> </mml:msub> </mml:math> of 6.7 × 10 13 cm −2 . The SBDs exhibit a low on voltage of 0.5 V, a small forward voltage of 1.1 V, and high current of 1050 mA mm −1 . Temperature-dependent I–V characteristics of the proposed device revealed that both thermionic emission and tunneling contributed to the current transport. This work paves the way for development of high-performance multi-channel AlN/GaN devices for RF and power applications.

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Publication Details

Journal
Applied Physics Express
Published
2024-12-24
DOI
https://doi.org/10.35848/1882-0786/ada2d8
Citations
1
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.31

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Multi-channel AlN/GaN Schottky barrier diodes

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Multi-channel AlN/GaN Schottky barrier diodes

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article en
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Abstract

Abstract This paper reports Schottky barrier diodes (SBDs) based on a multi-channel AlN/GaN heterostructure grown by metal-organic chemical vapor deposition. The proposed heterostructure with five channels achieved an extremely low R sh (69 Ω/□), thanks to a high <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mi>N</mml:mi> <mml:mi mathvariant="italic">s</mml:mi> </mml:msub> </mml:math> of 6.7 × 10 13 cm −2 . The SBDs exhibit a low on voltage of 0.5 V, a small forward voltage of 1.1 V, and high current of 1050 mA mm −1 . Temperature-dependent I–V characteristics of the proposed device revealed that both thermionic emission and tunneling contributed to the current transport. This work paves the way for development of high-performance multi-channel AlN/GaN devices for RF and power applications.

Applied Physics ExpressVol. 18(1)
Agency for Science, Technology and Research (SG), Nanyang Technological University (SG), Water Research Institute (SK), Singapore-MIT Alliance for Research and Technology (SG)
Agency for Science, Technology and Research, National Research Foundation Singapore
Affordable and clean energy
Openalex Percentile: Top 40%
GaN-based semiconductor devices and materials
0.31
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