AlGan/GaN Based Dual-Cavity Structure for DNA Detection

In this study, the effect of sensitivity on the performance of dielectric modulated AlGaN/GaN is reported in to determine the device’s viability as a precise biosensor to detect both charged biomolecules based on the charge variations at the interface. This device utilizes the charge plasma effect, and the behavior is analyzed using variations in the threshold voltage and drain current for the improved performance. The device is simulated using the Sentaurus technology computer aided design (TCAD) simulator and specifically used to determine the biomolecules associated with DNA. The presence of HfAlO 2 as the oxide provides unique insight for sensitivity improvement by reducing the leakage current with a high I on /I off ratio. Moreover, the threshold voltage is shifted to positive for normally OFF behavior. The results imply a significant drain current (IDS) increase, up to 335 mA/mm. Finally, optimizing the device parameters increases sensitivity, making it an able candidate for future biosensing applications.