Effect of Sb Dopant in Growth of r-GeO2 Thin Films

Sb doped rutile-GeO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>thin films were grown on rutile- Ti02 substrates varying the growth temperatures. The sample grown under 700°C shows FWHM of XRC as 694 arcsec.

Authors

Takayuki Ibi
Kentaro Kaneko (ORCID: https://orcid.org/0000-0001-6626-7611)
Isao Takahashi (ORCID: https://orcid.org/0000-0003-0416-5462)
Yukiko Shimizu
Toya Yagura

Institutions

Ritsumeikan University (JP)
Japan Patent Office (JP)

Publication Details

Published: 2024-11-13
DOI: https://doi.org/10.1109/icsj62869.2024.10804741
Primary Topic: Silicon Nanostructures and Photoluminescence
Type: article
Field-Weighted Citation Impact: 0.00

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article

Effect of Sb Dopant in Growth of r-GeO2 Thin Films

Takayuki Ibi, Kentaro Kaneko, Isao Takahashi, Yukiko Shimizu et al.

Nov 13, 2024

Silicon Nanostructures and Photoluminescence

article

Effect of Sb Dopant in Growth of r-GeO2 Thin Films

Takayuki Ibi, Kentaro Kaneko, Isao Takahashi, Yukiko Shimizu, Toya Yagura

November 13, 2024article en

Abstract

Ritsumeikan University (JP), Japan Patent Office (JP)

Openalex Percentile: Top 84%

Silicon Nanostructures and Photoluminescence

DOI Source OpenAlex

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Effect of Sb Dopant in Growth of r-GeO2 Thin Films — Takayuki Ibi, Kentaro Kaneko, et al. · (2024) | TGRS Research Map | TGRS