Implementation of Curved CMOS Image Sensors by Transferring Silicon-On-Insulator Layers

We present curved complementary metal-oxide-semiconductor image sensors using silicon-on-insulator (SOI) technologies. A 11-µm-thick SOI layer was curved into a cylindrical concave shape. The sensor successfully captured video images while effectively correcting lens aberrations.

Authors

Shigeyuki Imura (ORCID: https://orcid.org/0000-0002-1682-9193)
Masahide Goto (ORCID: https://orcid.org/0000-0002-1388-4488)
Hiroto Sato (ORCID: https://orcid.org/0009-0009-1659-2809)

Publication Details

Published: 2024-11-13
DOI: https://doi.org/10.1109/icsj62869.2024.10804744
Primary Topic: CCD and CMOS Imaging Sensors
Type: article
Field-Weighted Citation Impact: 0.00

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article

Implementation of Curved CMOS Image Sensors by Transferring Silicon-On-Insulator Layers

Shigeyuki Imura, Masahide Goto, Hiroto Sato

Nov 13, 2024

CCD and CMOS Imaging Sensors

article

Implementation of Curved CMOS Image Sensors by Transferring Silicon-On-Insulator Layers

Shigeyuki Imura, Masahide Goto, Hiroto Sato

November 13, 2024article en

Abstract

Affordable and clean energy

Openalex Percentile: Top 78%

CCD and CMOS Imaging Sensors

DOI Source OpenAlex

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Implementation of Curved CMOS Image Sensors by Transferring Silicon-On-Insulator Layers — Shigeyuki Imura, Masahide Goto, et al. · (2024) | TGRS Research Map | TGRS