Experimental Evidence for Local Fading Memory Effects in TaOx ReRAM Cells
This contribution presents experimental verification of bistability, a special form of local fading memory, in a physical TaOx memristor. System-theoretic methods are applied to the physics-based model of the ReRAM cell under consideration to explore the origin of the local fading memory and its robustness against the intrinsic cycle-to-cycle variability of the device. Multiple real-world measurements are performed to confirm the existence of one separatrix in the transient behavior of the device as a fingerprint of bistability.
Authors
- Ioannis Messaris (ORCID: https://orcid.org/0000-0002-4286-6553)
- Ronald Tetzlaff (ORCID: https://orcid.org/0000-0001-7436-0103)
- Fernando Corinto (ORCID: https://orcid.org/0000-0003-4431-5701)
- Alon Ascoli (ORCID: https://orcid.org/0000-0003-4026-9648)
- Marco Gilli (ORCID: https://orcid.org/0000-0001-5765-4046)
- Ahmet Şamil Demirkol (ORCID: https://orcid.org/0000-0002-1236-1300)
- Stephan Menzel (ORCID: https://orcid.org/0000-0002-4258-2673)
- Sheng S. Zhang (ORCID: https://orcid.org/0000-0003-4435-4110)
- Vasileios Ntinas (ORCID: https://orcid.org/0000-0002-2367-5567)
- Leon O. Chua (ORCID: https://orcid.org/0000-0002-1652-5464)
- Dimitrios Prousalis (ORCID: https://orcid.org/0000-0002-6200-4707)
- Vikas Rana (ORCID: https://orcid.org/0000-0002-2245-8472)
- N. Schmitt
Institutions
- Politecnico di Torino (IT)
- Ernst Ruska Centre (DE)
- Technische Universität Dresden (DE)
- University of California, Berkeley (US)
Publication Details
- Published
- 2024-10-21
- DOI
- https://doi.org/10.1109/metroxraine62247.2024.10795989
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00