Development of Through Semiconductor via Manufacturing Process for Heterogeneous Integration of GaN Power Device on Si-LSI

The sample was prepared by bonding the Al<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>surfaces of a GaN device and a Si device. The bonding sample was etched from the (111)Si side, which is the supporting substrate of the GaN device, to create a TSV (Through Semiconductor Via). By optimizing each process, it was achieved a TSV with a smooth bottom surface at the bonding sample.