Design of AlGaN/GaN HEMT for Biomolecules Recognition

Biosensors are essential in a number of fields like healthcare, environmental monitoring, and biotechnology, by offering quick and accurate detection of biological molecules. High Electron Mobility Transistors (HEMTs) integration into biosensor platforms has been identified as a possible strategy to improve sensing performance. The unique electronic characteristics of HEMT devices, such as their high electron mobility, low noise, and high-frequency operation, are used by HEMT-based biosensors to enhance the sensitivity and selectivity of biomolecule detection. Proteins, nucleic acids, and tiny compounds can all be detected using HEMTs with outstanding sensitivity and low detection limits. The high electron mobility within the transistor channel enables rapid response times, making them appropriate for applications involving real-time monitoring. We are using Aluminum gallium nitride/Gallium nitride (AIGaN/GaN) HEMT for biosensing purpose. It is designed using TCAD software.