Recent Progress and Task of GaN Materials and Devices for Power Applications

GaN is suitable for high-power electronic devices due to its high electron mobility and high breakdown voltage. In high-frequency devices, it is already being mass-produced for base stations and radars, and the development of materials and devices for future high-frequency devices is progressing. In power switching devices, low-power battery chargers have already been made smaller and more efficient, and vertical devices are being developed to achieve even higher power. In addition to device design and processes, the development of the material itself is necessary.